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DMN3115UDM
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 6)
Pulsed Drain Current (Note 6)
Symbol
V DSS
V GSS
I D
I DM
Value
30
±8
3.2
12.8
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
900
139
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
?
?
?
?
?
?
1
? 5
V
μ A
μ A
V GS = 0V, I D = 100 μ A
V DS = 30V, V GS = 0V
V GS = ? 8V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
V GS(th)
R DS (ON)
|Y fs |
V SD
0.5
?
?
?
?
40
50
76
8
0.7
1.0
60
80
130
?
1.1
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 4.5V, I D = 6A
V GS = 2.5V, I D = 2A
V GS = 1.5V, I D = 1.0A
V DS =10V, I D = 6A
V GS = 0V, I S = 2A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
476
77
59
?
?
?
pF
pF
pF
V DS = 15V, V GS = 0V
f = 1.0MHz
Notes:
6. Device mounted on FR-4 PCB, minimum recommended pad layout on 2oz. Copper pads.
7. Short duration pulse test used to minimize self-heating effect.
10
10
9
8
7
6
5
4
3
2
1
9
8
7
6
5
4
3
2
1
V DS = 5V
Pulsed
T A = 150°C
T A = 85°C
T A = 25°C
0
0
0
T A = -55°C
0.5 1 1.5
2
V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DMN3115UDM
Document number: DS31187 Rev. 8 - 2
2 of 5
www.diodes.com
November 2013
? Diodes Incorporated
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